mt47h64m8cf 美光 ddr2 sdram芯片用户手册 -凯发app

mt47h64m8cf 美光1gb: x4, x8, x16 ddr2 sdram芯片用户手册

使用该芯片的有：

mys-sam9g45 单板机/工控板

features
• vdd = 1.8v ±0.1v, vddq = 1.8v ±0.1v
• jedec-standard 1.8v i/o (sstl_18-compatible)
• differential data strobe (dqs, dqs#) option
• 4n-bit prefetch architecture
• duplicate output strobe (rdqs) option for x8
• dll to align dq and dqs transitions with ck
• 8 internal banks for concurrent operation
• programmable cas latency (cl)
• posted cas additive latency (al)
• write latency = read latency - 1 tck
• selectable burst lengths (bl): 4 or 8
• adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• on-die termination (odt)
• industrial temperature (it) option
• automotive temperature (at) option
• rohs-compliant
• supports jedec clock jitter specification