k9f1g08u0m nandflash存储器芯片用户手册 -凯发app

k9f1g08u0m nandflash存储器

使用该芯片的有：

myd-lpc1788 工控板/开发板

mys-sam9g45 工控主板/单板机

features
· voltage supply
-1.8v device(k9f1gxxq0m): 1.70v~1.95v
-3.3v device(k9f1gxxu0m): 2.7 v ~3.6 v
· organization
- memory cell array
-x8 device(k9f1g08x0m) : (128m 4,096k)bit x 8bit
-x16 device(k9f1g16x0m) : (64m 2,048k)bit x 16bit
- data register
-x8 device(k9f1g08x0m): (2k 64)bit x8bit
-x16 device(k9f1g16x0m): (1k 32)bit x16bit
- cache register
-x8 device(k9f1g08x0m): (2k 64)bit x8bit
-x16 device(k9f1g16x0m): (1k 32)bit x16bit
· automatic program and erase
- page program
-x8 device(k9f1g08x0m): (2k 64)byte
-x16 device(k9f1g16x0m): (1k 32)word
- block erase
-x8 device(k9f1g08x0m): (128k 4k)byte
-x16 device(k9f1g16x0m): (64k 2k)word
· page read operation
- page size
- x8 device(k9f1g08x0m): 2k-byte
- x16 device(k9f1g16x0m) : 1k-word
- random read : 25ms(max.)
- serial access : 50ns(min.)
· fast write cycle time
- program time : 300ms(typ.)
- block erase time : 2ms(typ.)
· command/address/data multiplexed i/o port
· hardware data protection
- program/erase lockout during power transitions
· reliable cmos floating-gate technology
- endurance : 100k program/erase cycles
- data retention : 10 years
· command register operation
· cache program operation for high performance program
· power-on auto-read operation
· intelligent copy-back operation
· unique id for 凯发app copyright protection
· package :
- k9f1gxxx0m-ycb0/yib0
48 - pin tsop i (12 x 20 / 0.5 mm pitch)
- k9f1g08u0m-vcb0/vib0
48 - pin wsop i (12x17x0.7mm)
- k9f1gxxx0m-pcb0/pib0
48 - pin tsop i (12 x 20 / 0.5 mm pitch)- pb-free package
- k9f1g08u0m-fcb0/fib0
48 - pin wsop i (12x17x0.7mm)- pb-free package
* k9f1g08u0m-v,f(wsopi ) is the same device as
k9f1g08u0m-y,p(tsop1) except package type.